Interplay between Charge Injection, Electron Transport, and Quantum Efficiency in Ambipolar Trilayer Organic Light‐Emitting Transistors

The fascinating characteristic of organic light-emitting transistors (OLETs) being electrical switches with an intrinsic capability makes them attractive candidates for a wide variety applications, ranging from sensors to displays. To date, the OLET ambipolar trilayer heterostructure is most developed architecture maximizing device performance. However, major challenge OLETs remains inverse correlation between external quantum efficiency and brightness under conditions. complex interconnection electroluminescent charge transport properties, in conjunction limited availability electron semiconducting materials, has indeed hampered disruptive evolution technology. Here, in-depth study interplay key fundamental features that determine performance reported by exploring semiconductors different properties OLETs. Through selection compounds tailored chemical structures, relation optoelectronic characteristics semiconductor, energy level alignment within structure, morphological unraveled. Furthermore, introduction suitable injector at emissive/semiconducting layers interface sheds light into bidimensional nature distinguishing factor this class devices respect prototypical diodes.